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Germanium detectors must be operated at low temperature, usually being cooled by liquid nitrogen (77 K) dewars. Compared with silicon semiconductors, the band gap of germanium semiconductors is so small that the leakage current due to thermal fluctuation at room temperature is too large to ignore.
germanium and determine the carrier concentration (and type) as a function of ... Germanium is an indirect bandgap semiconductor with a room temperature bandgap EG = 0.67 eV. As discussed in the module on Hall effect measurements ... The correspondingly large Hall voltage (VH = RHIB/t) ...
The electron Hall factor versus donor density. 1.T = 300 K; 2.T = 77 K. (Babich et al. [1969]). Resistivity versus impurity concentration., T = 300 K. (Cuttris [1981]). Temperature dependences of hole mobility for different doping levels.
Germanium is a semiconductor. The pure element was commonly doped with arsenic, gallium or other elements and used as a transistor in thousands of electronic applications. Today, however, other semiconductors have replaced it. Germanium oxide has a high index of refraction and dispersion.
The effects of germanium (Ge)-doping with concentrations in the range of 10 18 –10 20 cm −3 on oxygen precipitation (OP) in Czochralski (CZ) silicon wafers subjected to the low (800 °C)–high (1000 °C) two-step anneal following the rapid thermal anneal (RTA) at 1250 °C, which is actually the RTA-based internal gettering (IG) process, have been comprehensively investigated.
The germanium concentration is systematically less than the concentration in isolated lignite. We may state two geochemical conditions for the accumulation of germanium: (1) in isolated lignite; (2) in lignites and vitrains within the coal bed. ... In the Tarbagai field, coal was formed in a large delta: germanium-bearing lignite, banded ...
12%The germanium concentration is systematically less than the concentration in isolated lignite. We may state two geochemical conditions for the accumulation of germanium: (1) in isolated lignite; (2) in lignites and vitrains within the coal bed. ... In the Tarbagai field, coal was formed in a large delta: germanium-bearing lignite, banded ...
Intrinsic carrier concentration: 2.0·10 13 cm-3: Intrinsic resistivity: 46 Ω·cm: Effective conduction band density of states: 1.0·10 19 cm-3: Effective valence band density of states: 5.0·10 18 cm-3
i: intrinsic electron concentration p i: intrinsic hole concentration However, n i = p i Simply, n i:intrinsic carrier concentration, which refers to either the intrinsic electron or hole concentration Commonly accepted values of n i at T = 300°K Silicon 1.5 x 1010 cm-3 Gallium arsenide 1.8 x 106 cm-3 Germanium 2.4 x 1013 cm-3 b) Extrinsic ...
Laboratory findings revealed anemia and renal damage. Biopsy of the peripheral nerve revealed loss of the large sheathed nerve, a characteristic feature of germanium intoxication. A high concentration of germanium (GeO2) was detected in patient's hair and urine.
Hot-carrier galvanomagnetic phenomena in n-type germanium are studied for the case when the carrier concentration is large enough to ensure a Maxwellian energy distribution, displaced in the momentum space, in each valley. Numerical values of Hall mobility as obtained from the present theory agree quite closely with the earlier theory developed for low carrier concentration.
12%The concentration of germanium ranges from n × 10 −9 to n × 10 −6 in sulfides of zinc, copper, ... Each sub-structural unit is separated by a large fault and is a relatively independent Ge-bearing coal basin. The total proven coal resources of the coalfield are 13 billion tons ...
Germanium concentration in the alloy is 30%. As shown, the sheet resistivity in the alloy can be changed by three orders of magnitude simply by changing the amount of diborane flow. ... Hole effective masses in pseudomorphically strained Si 1−x Ge x layers have produced a large spread of data even for similar alloy and strain values mainly ...
Germanium (powder and pieces) STOT - repeated exposure Not classified as a specific target organ toxicant after repeated exposure. Aspiration hazard Aspiration hazard Not relevant. Solid. General information No specific health hazards known. The severity of the symptoms described will vary dependent on the concentration and the length of exposure.
dopant concentration for zinc-doped germanium detectors in a well-defined integrating chamber. Ten detector pairs of zinc -doped germanium, having dopant concentrations in the ... tance x must be made large to absorb all or most of the incident radiation. The dis-
Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard-brittle, grayish-white metalloid in the carbon group, chemically similar to its group neighbors silicon and tin.Pure germanium is a semiconductor with an appearance similar to elemental silicon. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature.
Answer: The intrinsic carrier concentration is a function of temperature and is directly proportional to the number of electron-hole pairs generated at a given temperature. The electron-hole pairs are generated when covalent bonds break. And this happens only when the electrons in outer orbit ge...
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